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植物研究 ›› 2000, Vol. 20 ›› Issue (4): 427-432.

• 论文 • 上一篇    下一篇

等离子体浸没N+注入豌豆种子的生长发育效应初报

杜兰芳1, 郁达1, 卢祥云1, 吴美萍2, 潘重光3   

  1. 1. 江苏省常熟高等专科学校, 常熟 215500;
    2. 中国纺织大学基础部, 上海 200051;
    3. 上海农学院植物科学系, 上海 201101
  • 收稿日期:1999-06-10 出版日期:2000-12-15 发布日期:2016-06-14
  • 作者简介:杜兰芳(1949-),女,副教授。从事方向:植物遗传学。
  • 基金资助:
    中国科学院冶金所离子束开放研究实验室资助课题(2310)

THE CROWTH EFFECT BY N+ USING A PLASMA IMERSION ION IMPLANTER OF PEA SEED IMPLANTED

DU Lan-Fang1, YU Da1, LU Xiang-Yun1, WU Mei-Ping2, PAN Chong-Guang3   

  1. 1. Dept. of Biology, Changshu College, Changshu 215500;
    2. Dept. of Basic Science, China Textile Univ., Shanghai 200051;
    3. Dept. of Plant Science of Shanghai Agricultural College, Shanghai 201101
  • Received:1999-06-10 Online:2000-12-15 Published:2016-06-14

摘要: 就等离子体浸没离子注入豌豆休眠种子后,对其生长发育的遗传学效应进行了研究。结果表明,经处理后的种子的萌发率明显下降,出苗、生长发育均呈滞后现象,且降低了株高。20min为半致死剂量。提出等离子体浸设离子注入可以作为诱变育种的一种经济、有效的诱变方法。

关键词: 等离子体浸没离子注入, 豌豆, 生长发育

Abstract: The genetic effect on plant growth by plasma immersion ion implanter after implantation on pea seed was studied. The results showed the seed treated was not only the germination percentage decline but also the plant growth retardation, and the stem of a plant was low. The semilethal dosage was 20 minutes. Being an economical and available method plasma immersion ion implantation in mutagenic breeding was proposed.

Key words: Plasma immersion ion implantation, Pea, Growth